MODELING AND SIMULATION METHOD OF OFF-STATE SMALL-SIGNAL FINFET

摘要

PURPOSE: A modeling and a simulation method of an off-state small signal equivalent circuit are provided to facilitate a nanometer field effect transistor design by modeling the off-state equivalent circuit in a process of a bulk FinFET structure. CONSTITUTION: A Rsub(n) is introduced to a SPICE model parameter. A substrate resistance is considered according to the number of fingers. The Rc representing from an active region to a metal contact and the Rc that is an intrinsic body resistor are included. An equivalent model including a source and drain junction capacity is extracted. The half or quarter is used in a 3D device simulation for reducing mesh according to the number of fingers. The structures with one to four fingers use the half structure. The structures with five to nine fingers apply the quarter structure.