| 摘要 |
<P>PROBLEM TO BE SOLVED: To compensate temperature dependence of a MOS transistor while preventing an increase in chip size and suppressing an increase in power consumption. <P>SOLUTION: A semiconductor device has a DRAM cell composed of an information charge accumulating capacitor and a memory cell selecting transistor, the threshold voltage value of a MOS transistor that constitutes a sense circuit is monitored, and the monitored threshold voltage value of the MOS transistor is converted through the use of a transfer ratio that is determined based on the capacitance of the information charge accumulating capacitor and the parasitic capacitance of the bit line. The converted voltage value is level-shifted so that the precharge voltage of a precharge circuit is a preset voltage at reference temperature, a current feeding capability is added to the level-shifted voltage value, and the voltage is fed as the precharge voltage. <P>COPYRIGHT: (C)2010,JPO&INPIT |
