| 摘要 |
PROBLEM TO BE SOLVED: To improve film quality of an oxide film deposited by chemical vapor deposition. SOLUTION: An oxide film modification apparatus 1 is provided with: a treatment furnace 3 which stores a substrate 2 with the oxide film (for example, silicon oxide film) deposited thereon by the chemical vapor deposition, and which is supplied with ozone-containing gas; and a light source 4 which irradiates the oxide film on the substrate 2 in the treatment furnace 3 with light having ultraviolet light. The light source 4 performs irradiation with the light concurrently with supply of the ozone-containing gas. Pressure of atmosphere of the ozone-containing gas is controlled, for example, to 0.1-30 Pa. Ozone concentration of the ozone-containing gas is, for example, 0.1-100 vol.%. COPYRIGHT: (C)2010,JPO&INPIT
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