Thin films of vanadium oxide having exceptionally high metal-insulator transition properties are synthesized by RF sputtering. An Al2O3 substrate is placed in a sputtering chamber and heated to a temperature up to about 550 degrees Celsius. Ar and O2 gases are introduced into the sputtering chamber at the flow values of about 92.2 sccm and about 7.8 sccm respectively. A voltage is applied to create a plasma in the chamber. A sputtering gun with vanadium target material is ignited and kept at a power of about 250 W. The phase transition parameters of vanadium dioxide thin films, synthesized by RF sputtering, are modulated by exposing the vanadium dioxide thin film to UV (ultraviolet) radiation so as to induce a change in oxygen incorporation of the vanadium dioxide thin film.
申请公布号
WO2009134810(A2)
申请公布日期
2009.11.05
申请号
WO2009US41988
申请日期
2009.04.28
申请人
THE PRESIDENT AND FELLOWS OF HARVARD COLLEGE;RAMANATHAN, SHRIRAM;RUZMETOV, DMITRY;NARAYANAMURTI, VENKATESH;KO, CHANGHYUN