| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve the problem such as deterioration in a yield of a memory circuit or decrease in a response speed due to variance in a thin-film transistor in the memory circuit using the thin-film transistor. <P>SOLUTION: Improvement of the yield of a memory cell and increase of the response speed are achieved by driving word lines with a voltage different from a logical amplitude of the memory cell. The improvement is adaptable for SRAM, DRAM, mask ROM, etc., and by integrally forming the memory circuit with the display device, a configuration of the more multi-functional display device is attainable. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
