发明名称 |
Method for Forming Trenches on a Surface of a Semiconductor Substrate |
摘要 |
A method for forming trenches on a surface of a semiconductor substrate is described. The method may include: etching a first plurality of trenches into the surface of the semiconductor substrate; filling the first plurality of trenches with at least one material; and etching a second plurality of trenches into every second trench of the first plurality of trenches. Furthermore, a method for forming floating-gate electrodes on a semiconductor substrate and an integrated circuit is described.
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申请公布号 |
US2009273017(A1) |
申请公布日期 |
2009.11.05 |
申请号 |
US20080112379 |
申请日期 |
2008.04.30 |
申请人 |
QIMONDA FLASH GMBH |
发明人 |
WILLER JOSEF;SPECHT MICHAEL;FRIEDERICH CHRISTOPH;KEITEL-SCHULZ DORIS |
分类号 |
H01L29/788;H01L21/28;H01L21/311 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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