| 摘要 |
In the formation of a multilayer interference filter that is included in a solid-state imaging device, at the outset, a titanium dioxide layer (401), a silicon dioxide layer (402), a titanium dioxide layer (403), and a spacer layer are successively laminated on an interlayer insulation film (304) to form a lower films. Next, the reflectance characteristics of the lower films are measured to specify the thickness of the lower films. When the thickness is deviated from the design value, the thickness of the spacer layer (404), and the thickness of upper films that include titanium dioxide layers (407, 409) and silicon dioxide layers (408, 410) are changed. Then, according to the changes, the spacer layer (404) is etched to regulate the thickness, and the upper films are formed thereon.
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