| 发明名称 |
Semiconductor device with field-shaping regions |
| 摘要 |
The semiconductor device has an active trench filling region (23a) connected with a buried region (24) which is located beneath a gate trench (83). The active trench filling region is connected with a source electrode film (58a). When the reverse bias voltage is applied between the buried region and conductive layer, and between base (32a) and conductive layer, the depletion region is expanded. An independent claim is also included for semiconductor device fabrication method. |
| 申请公布号 |
EP1406310(A3) |
申请公布日期 |
2009.11.04 |
| 申请号 |
EP20030022563 |
申请日期 |
2003.10.02 |
| 申请人 |
SHINDENGEN ELECTRIC MANUFACTURING COMPANY, LIMITED |
发明人 |
KUROSAKI, TORU;SHISHIDO, HIROAKI;KITADA, MIZUE;KUNORI, SHINJI;OHSHIMA, KOSUKE |
| 分类号 |
H01L29/78;H01L21/331;H01L21/334;H01L21/336;H01L29/06;H01L29/12;H01L29/423;H01L29/47;H01L29/739;H01L29/872 |
主分类号 |
H01L29/78 |
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