| 摘要 |
PURPOSE: A method for manufacturing semiconductor devices is provided to improve a filling degree of a tungsten layer as well as productivity of semiconductor devices. CONSTITUTION: A method for manufacturing semiconductor devices comprises the following steps of: forming a hole on an insulating layer, which is arranged on the surface of a semiconductor substrate(S10); heating the semiconductor substrate in a reaction chamber at 330-400°C(S20); injecting one gas selected from tungsten-containing gas, B2H6 gas, and SiH4 gas into the reaction chamber; forming a first tungsten layer in the hole(S30); injecting H2 gas or inert gas into the reaction chamber; raising the temperature of the semiconductor substrate up to 370-410°C for 30 seconds(S40); and forming a second tungsten layer on the first tungsten layer(S50). |
