| 摘要 |
<p>Disclosed is a stable organic thin film transistor having good switching characteristics, and a simple method for manufacturing an organic thin film transistor. Specifically disclosed is an organic thin film transistor which is characterized by comprising, on a substrate, at least a source electrode, a drain electrode, an organic semiconductor connecting the source electrode and the drain electrode, a gate electrode and an insulating film arranged between the organic semiconductor and the gate electrode and composed of a plurality of films. This organic thin film transistor is further characterized by containing a compound having a mercapto group represented by the general formula (I) below in the structure. General formula (I): (R) n -Si(A) 3-n -(B) (In the formula, R represents an alkyl group having 8 or less carbon atoms; A represents an alkoxy group or a halogen atom; B represents a substituent having an SH group; and n represents an integer of 0-2.)</p> |
