发明名称 |
Technique for evaluating local electrical characteristics in semiconductor devices |
摘要 |
By providing a test structure including a plurality of test pads, the anisotropic behavior of stress and strain influenced electrical characteristics, such as the electron mobility, may be determined in a highly efficient manner. Moreover, the test pads may enable the detection of stress and strain induced modifications with a spatial resolution in the order of magnitude of individual circuit elements. |
申请公布号 |
GB2446629(B) |
申请公布日期 |
2009.11.04 |
申请号 |
GB20070002703 |
申请日期 |
2005.05.25 |
申请人 |
ADVANCED MICRO DEVICES, INC |
发明人 |
FRANK WIRBELEIT;GERT BURBACH;KARSTEN WIECZOREK;MANFRED HORSTMANN |
分类号 |
H01L23/544;G01R31/28;H01L23/58 |
主分类号 |
H01L23/544 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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