METHOD FOR FABRICATING 3-DIMENSIONAL CELL IN NON-VOLATILE RANDOM ACCESS MEMORY

摘要

PURPOSE: A method for manufacturing a three dimensional cell of a nonvolatile memory device is provided to prevent a particle of a single crystal film by maintaining the height of the single crystal film constantly in a planarization process by forming a protective film on an interlayer dielectric film. CONSTITUTION: A first string is formed on a first substrate(11). An interlayer dielectric film(13) is formed thicker than the height of the first string. A protective film(14) is formed on the interlayer insulation layer. A contact hole is formed by etching the protective film and the interlayer dielectric layer. A single crystal film(16A) is formed by filling the contact hole. A second substrate(17) is formed on the single crystal film and the protective film. A second string is formed on the second substrate.