METHOD FOR FABRICATING DIELECTRIC FILM AND CAPACITOR

摘要

PURPOSE: A dielectric layer and a method for manufacturing a capacitor are provided to minimize impurity from penetrating the dielectric layer by suppressing the crystal growth of a high dielectric layer. CONSTITUTION: A high dielectric layer with the thickness without the surface roughness is formed. The thermal process and the nitrification process are progressed in the high dielectric layer. The high dielectric layer includes one of groups comprised of ZrO2, LaO2, HfO2, and PZT. The thermal process is one of a plasma annealing process, a rapid thermal process, and furnace annealing. The thermal process is performed using non-reduction gas.