| 摘要 |
PURPOSE: A repair address monitoring circuit of a semiconductor memory device is provided to monitor a column repair address and a row repair address independently by generating a row repair test mode and a column repair test mode additionally in a test mode generator. CONSTITUTION: A test mode generator(10a) generates a repair address monitoring test mode signal, a row repair test mode signal, and a column repair test mode signal in response to an external input signal. A row repair fuse part(20a) outputs a row repair confirmation signal by comparing the row address applied in response to the row repair test mode signal with the programmed row repair address. A column repair fuse part(30a) outputs the column repair confirmation signal by comparing the column address applied in response to the column repair test mode signal and the programmed column repair address. A repair address monitoring part(40) produces a repair address confirmation signal corresponding to the row repair confirmation signal or the column repair confirmation signal in response to a repair address monitoring test mode signal and an output control signal. |
