| 摘要 |
<p>PURPOSE: A method for manufacturing a three dimensional cell of a nonvolatile memory device is provided to reduce a defect of the single crystal film by completely processing the interface between the single crystal film and an amorphous silicon film. CONSTITUTION: A first string is formed on a first substrate(11). The interval between the first strings is filled. An interlayer dielectric layer(13) is formed thicker than the height of the first string. A protective film(14) is formed on the interlayer dielectric film and is a material with a selection ratio in a hydrofluoric acid based etchant. The protective film includes a nitride film. A second substrate(17) is formed on a single crystal film(16A) and the protective film.</p> |
