SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATION OF THE SAME

摘要

PURPOSE: A semiconductor device and method for fabrication of the same are provided to improve the degree of integration of the semiconductor device. CONSTITUTION: The source and drain(23) are arranged to the top and lower part of the floating body(28). The gate electrode(30) surrounds the floating body. The second sources and drain(32) are formed on the floating body. The floating body is the pillar shape. The floating body is made of poly-crystal silicon. A plurality of the pillar head is formed by etching selectively a part of the poly-crystal silicon.