| 摘要 |
A method of forming a line pattern array comprises the steps of setting a layout which includes first continuous line patterns arranged to have a first line width and a second continuous line pattern arranged to have a second line width larger than the first line width and positioned outside the first continuous line patterns; transferring the layout on a wafer; and inducing light scattering by changing an outermost pattern of the first continuous line patterns, which is most closely adjacent to the second continuous line patterns, into a plurality of dotted line patterns, wherein the plurality of the dotted patterns are arranged in a line form in order that a line pattern, which is different from the first continuous line patterns in line width, is formed based on a size of the dotted patterns. |
