发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
PURPOSE: A semiconductor memory device is provided to prevent an area of a semiconductor memory device from increasing by sharing a voltage terminal driving circuit and a voltage detection circuit. CONSTITUTION: A discharge pulse generator(350) generates a discharge pulse determining an activation section in response to an active signal and an auto refresh signal corresponding to banks. A discharge common voltage detector(300) detects the voltage level of the internal voltage terminal based on a first target level in response to the discharge pulse. A discharge common driver(310) discharges and drives the internal voltage terminal in response to the output signal of the discharge common voltage detector. |
申请公布号 |
KR20090114958(A) |
申请公布日期 |
2009.11.04 |
申请号 |
KR20080040861 |
申请日期 |
2008.04.30 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
HAN, WOO SEUNG;KANG, KHIL OHK |
分类号 |
G11C11/4074;G11C5/14;G11C11/403 |
主分类号 |
G11C11/4074 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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