发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A semiconductor memory device is provided to prevent an area of a semiconductor memory device from increasing by sharing a voltage terminal driving circuit and a voltage detection circuit. CONSTITUTION: A discharge pulse generator(350) generates a discharge pulse determining an activation section in response to an active signal and an auto refresh signal corresponding to banks. A discharge common voltage detector(300) detects the voltage level of the internal voltage terminal based on a first target level in response to the discharge pulse. A discharge common driver(310) discharges and drives the internal voltage terminal in response to the output signal of the discharge common voltage detector.
申请公布号 KR20090114958(A) 申请公布日期 2009.11.04
申请号 KR20080040861 申请日期 2008.04.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HAN, WOO SEUNG;KANG, KHIL OHK
分类号 G11C11/4074;G11C5/14;G11C11/403 主分类号 G11C11/4074
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