Thin film device and its fabrication method

摘要

A thin film device comprises: (a) a metal sulfide layer formed on a single crystal silicon substrate (1) by epitaxial growth; and (b) a compound thin film (3) with ionic bonding formed on the metal sulfide layer by epitaxial growth. An independent claim is also included for the fabrication of a thin film device comprising: (a) epitaxially growing metal sulfide on a single crystal silicon substrate by feeding molecular metal sulfide on the single crystal silicon substrate under a reduced pressure; and (b) epitaxially growing a compound thin film with ionic bonding on the metal sulfide.