MANUFACTURING METHOD OF NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PURPOSE: A method of manufacturing nitride semiconductor light emitting device is provided to separate the base substrate from the first nitride semiconductor layer by etching the sacrificial layer pattern after forming the sacrificial layer pattern between the Base substrate and the first nitride semiconductor layer. CONSTITUTION: The sacrificial layer pattern(120) is formed on the base substrate(110). The first nitride semiconductor layer(130) is formed on the sacrificial layer pattern and the base substrate exposed through the sacrificial layer pattern. The first nitride semiconductor layers are etched to form the same pattern as the sacrificial layer pattern. The first nitride semiconductor layers are grown horizontally. The active layer(140) and the second nitride semiconductor layer(150) are formed on the first nitride semiconductor layers. The base substrate is separated from the first nitride semiconductor layers by etching the sacrificial layer pattern.