发明名称 |
A method for producing NMOS and PMOS devices in CMOS processing |
摘要 |
The invention is related to a method for producing one or more nMOSFET devices and one or more pMOSFET devices on the same semiconductor substrate (1) comprising a Si active area (2) and a Ge active area (3). The source and drain regions (5,6) in the Si area are formed by amorphisation and doping, followed by Solid Phase Epitaxial Regrowth (SPER). This enables low thermal budget processing compatible with the Ge device, including concurrent dopant activation in the Si and Ge areas. |
申请公布号 |
EP2113940(A1) |
申请公布日期 |
2009.11.04 |
申请号 |
EP20080155510 |
申请日期 |
2008.04.30 |
申请人 |
IMEC |
发明人 |
BRUNCO, DAVID;DE JAEGER, BRICE;SEVERI, SIMONE |
分类号 |
H01L21/8238;H01L21/265 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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