发明名称 Inductor fabricated with dry film resist and cavity and method of fabricating the inductor
摘要 An inductor fabricated with a dry film resist and a cavity and a method of fabricating the inductor. The cavity can be formed in a substrate to minimize a parasitic capacitance generated by structures of upper electrodes, an insulating layer, and a lower electrode and minimize energy loss caused by an eddy current generated through the substrate. Also, a process of forming and planarizing the cavity can be simplified so as to form the cavity to a sufficient depth. As a result, an inductor having a high quality factor and a high self resonant frequency can be fabricated. Also, a scheme for simply forming and planarizing a cavity is contemplated.
申请公布号 US7612428(B2) 申请公布日期 2009.11.03
申请号 US20050291894 申请日期 2005.12.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK HAE-SEOK;SONG IN-SANG;CHOI HYUNG
分类号 H01L29/00 主分类号 H01L29/00
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