发明名称 |
Layered structure for electron device including regions of different wettability, electron device and electron device array that uses such a layered structure |
摘要 |
A layered structure comprises a variable wettability layer including a material that changes a critical surface tension in response to energy provided thereto, the wettability changing layer including at least a high surface energy part of large critical surface tension and a low surface energy part of low critical surface tension, a conductive layer formed on the variable wettability layer at the high surface energy tension part, and a semiconductor layer formed on the variable wettability layer at the low surface energy part.
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申请公布号 |
US7612455(B2) |
申请公布日期 |
2009.11.03 |
申请号 |
US20040856878 |
申请日期 |
2004.06.01 |
申请人 |
RICOH COMPANY, LTD. |
发明人 |
TANO TAKANORI;FUJIMURA KOH;TOMONO HIDENORI;KONDOH HITOSHI |
分类号 |
G02F1/1368;H01L23/48;H01L21/28;H01L21/288;H01L21/336;H01L23/52;H01L29/40;H01L29/786;H01L51/05;H01L51/40 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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