发明名称 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
摘要 PURPOSE: A method for manufacturing the semiconductor device is provided to increase the junction area of the wiring board by connecting the connection terminal of the interposer to the semiconductor device. CONSTITUTION: The semiconductor device(102) is formed on the substrate(101). The conductive films(106,107) are formed on the side surface of a member. The semiconductor device is adhered to the member in which the conductive film is formed by the adhesive(108). The electrode of the semiconductor device is electrically connected to the conductive film. The adhesive is the anisotropy conductive element. The adhesive includes conductive particles.
申请公布号 KR20090114343(A) 申请公布日期 2009.11.03
申请号 KR20090082612 申请日期 2009.09.02
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 NISHI KAZUO;ADACHI HIROKI;KUSUMOTO NAOTO;SUGAWARA YUUSUKE;TAKAHASHI HIDEKAZU;YAMADA DAIKI;HIURA YOSHIKAZU
分类号 H01L21/60;H01L27/14;H01L23/12;H01L23/498;H01L27/146;H01L31/0203;H01L31/04;H01L31/10 主分类号 H01L21/60
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