发明名称 |
Image sensor with a gate electrode between the photoelectric conversion region and the charge detection region, the gate electrode comprising p-type and n-type regions adjacent to one another and method of fabricating the same |
摘要 |
Example embodiments relate to an image sensor and a fabrication method thereof. An image sensor may include a semiconductor substrate. A charge transfer structure may be formed on the semiconductor substrate. The charge transfer structure may include a gate insulating film that may be formed on a channel region in the semiconductor substrate between a photoelectric conversion region and charge detection region, and a transfer gate electrode that may be formed on the gate insulating film that may have a region doped with a first conductivity type impurity-doped region and a second conductivity type impurity-doped region which may be adjacent to each other.
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申请公布号 |
US7612392(B2) |
申请公布日期 |
2009.11.03 |
申请号 |
US20060528409 |
申请日期 |
2006.09.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JUNG SANG-IL;YI DUK-MIN |
分类号 |
H01L31/062;H01L31/113 |
主分类号 |
H01L31/062 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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