| 摘要 |
Substrate having a first partial substrate with a carrier layer and a second partial substrate, which is bonded to the first partial substrate. The second partial substrate has an insulator layer, which is applied on the carrier layer and has at least two regions each having a different thickness, thereby forming a stepped surface of the insulator layer, and a semiconductor layer, which is applied to the stepped surface of the insulator layer and is formed at least partially epitaxially, wherein the semiconductor layer has a planar surface which is opposite to the stepped surface of the insulator layer. Transistors are formed on the semiconductor layer.
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