发明名称 |
Method of fabricating metal-oxide-semiconductor transistor |
摘要 |
A method of fabricating a metal-oxide-semiconductor (MOS) transistor is provided. First, a patterned hard mask layer with an opening therein is formed over the substrate. A spacer is formed on the sidewall of the patterned hard mask layer in the opening. An isotropic etching process is performed on the substrate to form a recess in the substrate. An ion implant process is performed on the substrate in the lower portion of the recess using oxidation-restrained ions. The spacer is removed. Then, a thermal process is performed to form a gate oxide layer on the surface of the substrate within the recess such that the gate oxide layer in the upper portion of the recess is thicker than that in the lower portion of the recess.
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申请公布号 |
US7611949(B2) |
申请公布日期 |
2009.11.03 |
申请号 |
US20060309205 |
申请日期 |
2006.07.13 |
申请人 |
PROMOS TECHNOLOGIES, INC. |
发明人 |
CHANG SAN-JUNG;LIN JIM |
分类号 |
H01L21/336;H01L21/31;H01L21/469 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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