| 摘要 |
A memory device and method of operation are provided. The memory device comprises a plurality of memory cells arranged in at least one column, during a write operation a data value being written to an addressed memory cell within a selected column from said at least one column. A supply voltage line is associated with each column, the supply voltage line being connectable to a first voltage source to provide a supply voltage at a first voltage level to the associated column. Threshold circuitry is connected to a second voltage source having a second voltage level, the threshold circuitry having a threshold voltage. Control circuitry is used during the write operation to disconnect the supply voltage line for the selected column from the first voltage source, and to connect the threshold circuitry to the supply voltage line for the selected column. As a result, the supply voltage to the addressed memory cell transitions to an intermediate voltage level determined by the threshold voltage of the threshold circuitry, thereby de-stabilizing the addressed memory cell and assisting in the write operation. The technique of the present invention provides a particularly simple and power efficient technique for implementing a write assist mechanism.
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