| 发明名称 |
Monolithic power semiconductor structures including pairs of integrated devices |
| 摘要 |
Monolithic semiconductor structures having at least two pairs of two lateral semiconductor devices combined on a first surface of a single semiconductor substrate. Embodiments include connected source terminals defining common source terminals.
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| 申请公布号 |
US7612418(B2) |
申请公布日期 |
2009.11.03 |
| 申请号 |
US20040582035 |
申请日期 |
2004.12.10 |
| 申请人 |
GREAT WALL SEMICONDUCTOR CORPORATION |
发明人 |
SHEN ZHENG;OKADA DAVID N. |
| 分类号 |
H01L27/088;H01L;H01L27/07;H01L29/10;H01L29/78 |
主分类号 |
H01L27/088 |
| 代理机构 |
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