发明名称 Method of improving post-develop photoresist profile on a deposited dielectric film
摘要 A method and apparatus for improving the post-development photoresist profile on a deposited dielectric film. The method includes depositing a TERA film having tunable optical and etch resistant properties on a substrate using a plasma-enhanced chemical vapor deposition process and post processing the TERA film using a plasma process. The apparatus includes a chamber having an upper electrode coupled to a first RF source and a substrate holder coupled to a second RF source; and a showerhead for providing multiple precursors and process gasses.
申请公布号 US7611758(B2) 申请公布日期 2009.11.03
申请号 US20030702049 申请日期 2003.11.06
申请人 TOKYO ELECTRON LIMITED;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 FUKIAGE NORIAKI;BABICH KATHERINA
分类号 H05H1/24;C23C16/40;C23C16/44;C23C16/455;C23C16/509;C23C16/56;G03F7/09;H01L21/027;H01L21/033 主分类号 H05H1/24
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