发明名称 |
Method of improving post-develop photoresist profile on a deposited dielectric film |
摘要 |
A method and apparatus for improving the post-development photoresist profile on a deposited dielectric film. The method includes depositing a TERA film having tunable optical and etch resistant properties on a substrate using a plasma-enhanced chemical vapor deposition process and post processing the TERA film using a plasma process. The apparatus includes a chamber having an upper electrode coupled to a first RF source and a substrate holder coupled to a second RF source; and a showerhead for providing multiple precursors and process gasses.
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申请公布号 |
US7611758(B2) |
申请公布日期 |
2009.11.03 |
申请号 |
US20030702049 |
申请日期 |
2003.11.06 |
申请人 |
TOKYO ELECTRON LIMITED;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FUKIAGE NORIAKI;BABICH KATHERINA |
分类号 |
H05H1/24;C23C16/40;C23C16/44;C23C16/455;C23C16/509;C23C16/56;G03F7/09;H01L21/027;H01L21/033 |
主分类号 |
H05H1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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