| 摘要 |
PURPOSE: A method of cleaning wafer is provided to remove the slurry and particles adhered to the wafer surface by the first cleaning process using deionized water and ultrasonic wave. CONSTITUTION: A polishing is performed on a wafer(ST1). The first cleaning process is performed on the polished wafer to remove the particles using deionized water and ultrasonic wave(ST2). The second polishing process is performed on the polished wafer. The third cleaning process is performed on the polished wafer by the ultrasonic wave method. The fourth cleansing process is performed on the wafer. The second and fourth cleaning processes are carried out by the O3 processing, and the rinse and drying(Dry) process(ST3)..
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