| 摘要 |
PURPOSE: A light emitting diode is provided to improve the luminous efficiency by providing an electron injecting promotion layer under an active layer and preventing resorption of the light. CONSTITUTION: In a light emitting diode, a first semiconductor layer(110) is formed on a substrate(100). The electron injecting promotion layer(120) includes a quantum-well layer radiating the light. The active layer(130) includes the quantum-well layer radiating the light, and a second semiconductor layer(140) is formed on the active layer. The electron injecting promotion layer has a band gap wider than the active layer. The second semiconductor layers are the p-type GaN, and the first semiconductor layer is the n-type GaN.
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