发明名称 |
Method to control uniformity/composition of metal electrodes, silicides on topography and devices using this method |
摘要 |
A method for depositing metals on surfaces is provided which comprises (a) providing a substrate (103) having a horizontal surface (107) and a vertical surface (105); (b) depositing a first metal layer (109) over the horizontal and vertical surfaces; (c) depositing a layer of polysilicon (111) over the horizontal and vertical surfaces; (d) treating the layer of polysilicon with a plasma such that a residue (113) remaining from the treatment is preferentially formed over the horizontal surfaces rather than the vertical surfaces, and wherein the residue is resistant to a first metal etch; and (e) exposing the substrate to the first metal etch.
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申请公布号 |
US7611936(B2) |
申请公布日期 |
2009.11.03 |
申请号 |
US20070803097 |
申请日期 |
2007.05.11 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
MATHEW LEO;NOBLE ROSS E.;RAI RAGHAW S. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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