| 摘要 |
<p>PURPOSE: A method for inspecting defects in phase shift mask backside is provided to accurately detect the foreign material on the photomask backside surface and to efficiently repair scratches and foreign materials. CONSTITUTION: The phase shifting mask having the first phase shift layer patterns are formed on the substrate including the main pattern region and the edge region. The second phase shift layer pattern is selectively formed on the substrate back-side of the edge region(S20). The phase shifting mask in which the second phase shift layer pattern is formed is mounted in the first phase shift layer pattern testing apparatus(S30). The second reflection ratio the substrate back-side and to the first reflection ratio to the second phase shift layer pattern are measured. The measured first reflection ratio and the second reflection ratio are feed baked to the first phase shift layer pattern testing apparatus. The check for the substrate back-side is performed based on the first reflection ratio and the second reflection ratio(S70).</p> |
