发明名称 |
Method for forming poly-silicon film |
摘要 |
In the present invention, a method is used for forming a poly-silicon film that uses sequential lateral solidification (SLS) with two laser irradiations using a mask for patterning the laser beam so as to increase the grain length. The method also achieves enhancing the throughput due to the use of a mask that is designed for the method.
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申请公布号 |
US7611807(B2) |
申请公布日期 |
2009.11.03 |
申请号 |
US20060368616 |
申请日期 |
2006.03.07 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
CHEN HUNG-TSE;CHEN YU-CHENG;CHU FANG-TSUN |
分类号 |
G03F1/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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