发明名称 LIGHT EMITTING DIODE
摘要 PURPOSE: A light emitting diode is provided to improve luminous efficiency by supplying a tunneling blocking layer and an electronic storing layer between second quantum well layers. CONSTITUTION: In a light emitting diode, a first semiconductor layer(110) is formed on a substrate(100). A current diffusion layer(120) includes a first quantum-well layer radiating the light, and an active layer(130) includes a second quantum-well layer having a band gap narrower than that of first quantum-well layer. The second semiconductor layer(140) is formed on an active layer. The current diffusion layer more includes an electronic storing layer between the first quantum-well layers.
申请公布号 KR100924456(B1) 申请公布日期 2009.11.03
申请号 KR20090009144 申请日期 2009.02.05
申请人 EPIPLUS CO., LTD. 发明人 PARK, HYEONG SOO
分类号 H01L33/06 主分类号 H01L33/06
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