| 摘要 |
PURPOSE: A method of manufacturing semiconductor device is provided to obtain self-planarization characteristic by polish using a fixed abrasive pad. CONSTITUTION: The insulating layer(104a) which covers the substructure(102) on the semiconductor substrate(100) having the trench(T) for device isolation is formed. A part of the protrusion having the insulating layer is polished by the slurry. The rest of protrusion is polished by the particle abrasive pad. The slurry left behind on the insulating layer is cleaned. The slurry remaining behind is cleaned by the deionized water. The rest of a protrusion is ground by the grinding self stop slurry.
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