| 摘要 |
PURPOSE: A semiconductor memory device is provided to reduce current consumption by preventing a new sub word line signal from being enabled before a main word line signal is successively enabled. CONSTITUTION: A counter performs the counting operation successively and generates the first to eighth address signal. A refresh signal generator(3) generates a refresh signal in response to a refresh command and an external active signal. The refresh signal generator generates the refresh signal to a pulse signal if the refresh command is applied to the pulse signal when an external active signal is disabled. The refresh signal generator generates the disabled refresh signal when the external active signal is enabled. A control signal generator(4) generates a control signal in response to the refresh signal. A sub word line selection signal generator(5) generates the sub word line selection signal in response to the control signal.
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