METHOD OF FABRICATING PHOTOELECTRIC DEVICE OF GROUP III NITRIDE SEMICONDUCTOR AND STRUCTURE THEREOF

摘要

PURPOSE: A method of fabricating photoelectric device of group iii nitride semiconductor and structure thereof are provided to form the patterned epitaxial blocking layer by using grooves between convexes. CONSTITUTION: The first group III nitride semiconductor layer(62) is formed on the substrate(61). The epitaxial blocking layer patterned on the first group III nitride semiconductor layer is formed. The second group III nitride semiconductor layer(64) is formed on the exposed region of the patterned epitaxial blocking layer and the first group III nitride semiconductor layer. The patterned epitaxial blocking layer is removed. The third group III nitride semiconductor layer(65) is formed on the second group III nitride semiconductor layer. The conductive layer(67) is formed on the third group III nitride semiconductor layer.