CAPACITOR OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

摘要

PURPOSE: A capacitor of semiconductor device and method for forming the same are provided to minimize the leakage current by forming a material layer of the same crystalline structure as a material of the bottom electrode. CONSTITUTION: The bottom electrode(220A), and the dielectric layer(230A) and upper electrode(240) are formed in the top of the substrate in which the contact plug(200) is formed. The material layer(210) is formed between a substrate and bottom electrode. The material layer is made of a noble metal silicide. The material layer is made of iridium silicide or platinum-silicide. The bottom electrode is made of the metal oxide of perovskite group. The dielectric layer is made of a perovskite material.