METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of manufacturing semiconductor device is provided to minimize the loss of the insulating layer for the element isolation generated in the pad area. CONSTITUTION: The semiconductor substrate(100) includes the cell region, the peripheral area and the pad area(P) which connects the peripheral area(PE). The gate electrode(G) of the vertical TR is formed in the outer surface. The metal oxide layer which covers the outer surface of the vertical TR is formed. The insulating layer(114a) which has the etching selectivity different from the metal oxide layer is formed. The metal oxide layer which covers the gate electrode is removed from the vertical TR. The wiring is formed to be connected to the gate electrode.