| 摘要 |
<p>PURPOSE: A method for manufacturing transmission typed photomask is provided to prevent the degradation of the intensity of an image of the imaged in a wafer by forming the trench which has a phase difference of the light as 180 degree. CONSTITUTION: The light block film pattern(215) is formed on the transparent substrate(200). The exposed portion of the transparent substrate is etched by using the light block film pattern as the etching mask. The light is inlaid on the transparent substrate. The trench(220) is formed whose depth makes 180 degree the phase difference of the light reflected on the transparent substrate and the light reflected on the light block film pattern.</p> |
