METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of manufacturing semiconductor device is provided to minimize the loss of the insulating layer for the device isolation generated in the pad area. CONSTITUTION: The pillar type active pattern(103) is formed in the semiconductor substrate(100). The pad area(P) connects the peripheral area(PE), the cell[cell]area(C) and peripheral area. The vertical TR in which the gate electrode(G) is formed in the outer side surface is formed in the cell region. The barrier film which covers the outer side surface of the vertical TR is formed. The insulating layer which makes the part corresponding to the gate electrode exposed is formed. The resist pattern which protects the pad area is formed and the cell region and peripheral area are exposed. The wiring is formed to connect the gate electrode.