发明名称 |
INTERCONNEXIONS AVEC LA CONTRAINTE HARMONISEE ET PROCEDES DE FABRICATION DE CELLES-CI |
摘要 |
Interconnects with harmonized stress and methods for fabricating the same. An interconnect comprises a substrate having a conductive member. A composite low-k dielectric layer interposed with at least one stress-harmonizing layer therein overlies the substrate. A conductive feature in the composite low-k dielectric layer passes through the at least one stress-harmonizing layer to electrically connect the conductive member. |
申请公布号 |
FR2887368(B1) |
申请公布日期 |
2009.10.30 |
申请号 |
FR20060005035 |
申请日期 |
2006.06.06 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO.,LTD. |
发明人 |
LU YUNG CHENG;TSAI MING HSING |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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