发明名称 INTERCONNEXIONS AVEC LA CONTRAINTE HARMONISEE ET PROCEDES DE FABRICATION DE CELLES-CI
摘要 Interconnects with harmonized stress and methods for fabricating the same. An interconnect comprises a substrate having a conductive member. A composite low-k dielectric layer interposed with at least one stress-harmonizing layer therein overlies the substrate. A conductive feature in the composite low-k dielectric layer passes through the at least one stress-harmonizing layer to electrically connect the conductive member.
申请公布号 FR2887368(B1) 申请公布日期 2009.10.30
申请号 FR20060005035 申请日期 2006.06.06
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO.,LTD. 发明人 LU YUNG CHENG;TSAI MING HSING
分类号 H01L21/768 主分类号 H01L21/768
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