| 摘要 |
PURPOSE: A group III nitride based semiconductor light emitting diode and a manufacturing method thereof are provided to improve luminance of a light emitting diode by minimizing total reflection of a light. CONSTITUTION: A group III nitride based semiconductor light emitting diode is formed by laminating a wafer bonding layer, a reflective ohmic contact current spreading layer(206), a top nitride based clad layer, a nitride based active layer, a bottom nitride based clad layer(203), a partial n-type electrode structure(301), and p-type electrode pad(302) on a top surface of a laminate supporting substrate. The top nitride based clad layer is made of p-type conductive semiconductor. The bottom nitride based clad layer is made of n-type conductive semiconductor. |
