| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device in which storage of both a large capacity program which requires rewriting and a small capacity data which requires frequent rewriting can be performed with a memory mat of one kind, and which is compact in size and is easy for software development. <P>SOLUTION: The nonvolatile semiconductor memory device 100 is constituted by a memory mat in which a plurality of rewritable nonvolatile memory transistors Tr are arranged in a matrix form, and writing, reading, and erasing in the nonvolatile memory transistors Tr can be performed by wordlines LG1 to LG4 and bitlines LD1 to LD4. In the nonvolatile semiconductor memory device 100, nonvolatile memory transistors Tr connected to word lines LG1 to LG4 are divided into units of a word length used in an OS for controlling the nonvolatile semiconductor memory device 100, and the transistors of each word-length unit are arranged in one of word regions W1 to W4, each of which consists of a separately formed well in a semiconductor substrate 30. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
