| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a reflective mask capable of mask inspection by pattern comparison on a layout in a mode of scan exposure by injecting exposure light slantly to the mask, and its inspection method. <P>SOLUTION: The reflective mask for irradiating the exposure light slightly incident to a mask surface over a predetermined exposure area and projecting light reflected on the mask surface to a wafer for scan exposure includes a plurality of rectangular chip regions 11a-11f containing the same mask patterns arranged in a scanning direction 12. When shape correction is made depending on a distance from the center line of an exposure area 21 (azimuth angleθ), the two chip regions 11a and 11b have the identical mask patterns after the shape correction. Thus the identical patterns can be compared with each other on the layout to perform die-to-die inspection for defect inspection of the mask pattern. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
