| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve efficiency in failure analysis of a semiconductor device by a secondary electron image. Ž<P>SOLUTION: The analysis device of the semiconductor device comprises a means for inputting the secondary electron image obtained by detecting a secondary electron obtained when a charged particle beam is irradiated on the semiconductor device, a means for dividing the secondary electron image of the semiconductor device as a comparison source into regions of different potentials based on design data of the semiconductor device as the comparison source and the secondary electron image of the semiconductor device as the comparison source, a means for generating a pseudo good product secondary electron image by conducting smoothing treatment for smoothing concentration of the respective regions on the respective regions divided by the potentials of the secondary electron image of the semiconductor device as the comparison source, and a means for displaying the pseudo good product secondary electron image and the secondary electron image of the semiconductor device to be analyzed. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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