| 摘要 |
PROBLEM TO BE SOLVED: To provide a circuit parameter extraction apparatus and a circuit parameter extraction method with and by which characteristics of a semiconductor device can be simulated with a high degree of accuracy. SOLUTION: A circuit parameter extraction apparatus 101 is provided with a computing portion 32 for determining, by fitting, one or a plurality of parameters of a circuit model in which a drain current is expressed by the sum of drain currents of at least two transistors, a drain current of one of the transistors is expressed by a function of a product of the difference between a gate-source voltage and a threshold voltage and a drain-source voltage, and a square of the drain-source voltage, and a drain current of the other of the transistors is expressed by a function of a product of the difference between a gate-source voltage and a threshold value voltage and a drain-source voltage, and a product of a power of the drain-source voltage and a power of the difference between the gate-source voltage and the threshold voltage, based on the results of measurement on the drain current characteristics of MOSFET. COPYRIGHT: (C)2010,JPO&INPIT
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