发明名称 |
METHOD OF MANUFACTURING AN INTEGRATED CIRCUIT |
摘要 |
An integrated circuit (100) is provided that comprises a substrate (140) of silicon and an interconnect (130) in a through-hole extending from the first to the second side of the substrate. The interconnect is coupled to a metallisation layer (120) on the first side of the substrate and is provided on an amorphous silicon layer that is present at a side wall of the through-hole, and particularly at an edge thereof adjacent to the first side of the substrate. The interconnect comprises a metal stack of nickel and silver. A preferred way of forming the amorphous silicon layer is a sputter etching technique.
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申请公布号 |
US2009267232(A1) |
申请公布日期 |
2009.10.29 |
申请号 |
US20070441769 |
申请日期 |
2007.09.17 |
申请人 |
NXP, B.V. |
发明人 |
MOREL STEPHANE;DEN DEKKER ARNOLDUS;RODENBURG ELISABETH C.;VAN GRUNSVEN ERIC C. E. |
分类号 |
H01L23/522;H01L21/768;H01L23/48 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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